Description
BSC014N04LS6 Power MOSFET
40V Breakdown Voltage meets 1.4mΩ Ultra-Low RDS(on) – The Professional OptiMOS™ 6 Technology Choice for High-Density DC-DC Converters.
// High-Efficiency Logic Level Drive SuperSO8 TDSON-8 Portfolio
The Next-Generation Power Density Advantage
The BSC014N04LS6 represents a premier flagship single-chip solution for high-density, space-constrained power distribution units demanding absolute thermal management optimization and ultra-low conduction losses. Engineered by Infineon utilizing their breakthrough OptiMOS™ 6 generation silicon architecture, this N-channel power MOSFET cuts down parasitic charge elements flawlessly. Housed in an industry-leading SuperSO8 (TDSON-8) package layout footprint, it secures pure, deterministic power telemetry loops and eliminates high-current conduction bottleneck hazards.
- 40V Rugged drain-source breakdown threshold handling industrial power ripples safely
- Ultra-low 1.4mΩ maximum on-state resistance matrix minimizing dynamic thermal generation
- Optimized gate charge and output charge characteristics heavily reducing switching losses
Key Performance Advantages
1.4mΩ Lowest RDS(on)
Maintains an unmatched low resistance baseline when fully enhanced, drastically eliminating power conversion drops and thermal waste indicators.
OptiMOS™ 6 Technology
Features an advanced gate charge structure that delivers a stellar figure of merit (FOM), heavily driving up switching frequencies smoothly.
SuperSO8 Packaging
Housed in a standard low-profile TDSON-8 footprint, offering low parasitic package inductance and superior structural multi-layer PCB dissipation.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Infineon Technologies (International Rectifier) |
| Part Number (MPN) | BSC014N04LS6 |
| Product Category | High-Performance N-Channel Power MOSFET Discrete Series |
| Drain-Source Voltage (Vds) | 40 V Maximum Continuous Blocking Limit Bound |
| Max On-State Resistance | 1.4 mΩ RDS(on) Maximum (at VGS = 10V Rated Drive Condition) |
| Continuous Drain Current | Silicon Limited Continuous DC Rating adapted to package constraints |
| MOSFET Technology Core | Advanced OptiMOS™ 6 Silicon Generation Matrix Array |
| Drive Type Level | Logic Level Drive Gate Compatibility Operation Grid |
| Package / Case Form | SuperSO8 / TDSON-8 Package (Lead-Free SMD Outline Layout) |
| Temperature Window | Extended Industrial Operating Range Bounds (-55°C to +150°C) |
Versatile High-Efficiency Applications
- Server Data Centers: Core synchronous rectification stages inside high-efficiency SMPS and high-density telecom brick power modules.
- DC-DC Converters: Isolated and non-isolated buck-boost converter circuits requiring minimal dynamic commutation penalties.
- Advanced Motor Drives: High-performance half-bridge switching nodes for battery-powered power tools, light e-vehicles, and BLDC drives.
- Battery Management Layouts: Provides deterministic current safety isolation corridors inside industrial multi-cell e-mobility battery packs.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-EFFICIENCY POWER MOSFET SOLUTIONS // DIRECT SOURCE ARCHITECTURE