描述
H5ANAG4NMNR-VKC DDR4 SDRAM
2666Mbps High Bandwidth meets 1.2V Low Voltage – The Professional 16Gb DDR4 Memory Choice for Enterprise Servers, Cloud Computing, and High-End Industrial Systems.
// Ultra-High Density DDR4 Component 2Gx8 Configuration 78-FBGA Portfolio
The High-Density Enterprise Memory Advantage
The H5ANAG4NMNR-VKC represents a premier professional 16Gb DDR4 SDRAM high-density volatile memory solution engineered for data-heavy, critical hardware architectures demanding absolute signal processing efficiency and extensive interface bandwidth profiles. Built on SK Hynix’s advanced multi-die silicon memory framework, this module processes high-frequency data transmission up to 2666Mbps data rates flawlessly without code execution latency hazards or performance bottlenecks. Housed in an industry-standard 78-FBGA package footprint, it secures pure, deterministic high-speed data tracking execution loops and completely cuts off systemic power bus transmission barriers.
- Massive 16 Gigabits (16Gb) density organized in an efficient 2G x 8 structural memory array configuration
- Advanced DDR4 standard operating at a low 1.2V power rail, reducing overall board power consumption safely
- High-speed DDR4-2666 specification (CL19 parameter nodes) optimizing read/write access cycles cleanly
Key Performance Advantages
2666Mbps Data Rates
Delivers exceptional system throughput and ultra-low access latency, handling high-volume database streams and real-time cloud computation cleanly.
1.2V Low Voltage Rail
Saves up to 20% electrical energy compared to older DDR3 architectures, minimizing thermal footprints and optimizing systemic reliability safely.
78-FBGA Advanced Package
Housed inside a fine-pitch ball grid array layout, achieving robust high-density electrical performance and superb mechanical shock resistance smoothly.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | SK Hynix (Original Factory Sealed Line) |
| Part Number (MPN) | H5ANAG4NMNR-VKC (DDR4 M-die High-Density) |
| Memory Technology | DDR4 SDRAM (Double Data Rate 4 Synchronous DRAM Architecture) |
| Density Capacity | 16 Gigabits (16Gb High-Density Continuous Silicon Matrix) |
| Organization Format | 2G Words x 8 Bits Configuration Model |
| Speed Frequency | DDR4-2666 (PC4-21300 Standard Speed Node Performance) |
| Latency CAS Profile | CL19 Nominal Dynamic Cycle Latency Parameters |
| Voltage Supply Nominal | 1.2 VDC Fixed Lowered Main Memory VDD Power Rail Calibration |
| Package / Case Form | 78-FBGA package (78-Ball Fine-Pitch Ball Grid Array Package Structure) |
| Operating Temperature | 0°C to +85°C Commercial Standard Component Range |
Versatile High-Density Applications
- Enterprise Servers: Core high-speed memory chip driving data center arrays, cloud computation storage, and high-density virtualization tracks safely.
- Networking Core Systems: Delivers deterministic buffer queuing and packet routing control matrices inside premium enterprise switches and core gateways smoothly.
- Industrial Computing: Handles demanding automation data caching, high-end industrial PCs, and advanced medical diagnostic hardware cleanly.
- AI Edge Frameworks: Optimizes continuous caching performance inside localized AI edge calculation nodes and advanced automation servers.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-PERFORMANCE DDR4 SDRAM MEMORY SOLUTIONS // DIRECT SOURCE FACTORY ARCHITECTURE