描述
IPW60R024CFD7 Power MOSFET
600V Blocking Voltage meets 24mΩ Low RDS(on) – The Professional CoolMOS™ CFD7 Silicon Choice for High-Power Resonant Topologies.
// High-Voltage Fast Body Diode Integration Three-Pin TO-247 Portfolio
The High-Voltage Resonant Switching Advantage
The IPW60R024CFD7 represents a premier flagship single-chip switching solution for space-constrained, high-voltage applications demanding absolute thermal management efficiency and excellent reverse recovery behaviors. Engineered by Infineon inside their trusted CoolMOS™ CFD7 superjunction architecture, this N-channel power MOSFET mitigates dynamic switching losses flawlessly under high-power commutation topologies. Housed in a standard through-hole TO-247 package footprint, it secures pure, deterministic power corridors and eliminates high-voltage reliability hazards.
- 600V Rugged drain-source breakdown threshold handling primary grid voltage spikes safely
- Ultra-low 24mΩ maximum on-state resistance matrix minimizing localized dissipation
- Integrated fast body diode providing ultra-low reverse recovery charge properties cleanly
Key Performance Advantages
24mΩ Low RDS(on)
Maintains an exceptionally low resistance profile when fully enhanced, sharply dropping system conduction power losses and internal core thermal buildup.
Fast Intrinsic Diode
Integrates an advanced fast-recovery body diode structure to reduce reverse recovery time (trr), lowering circuit stress in soft-switching networks.
Rugged TO-247 Form
Housed in a standard through-hole package configuration, providing highly reliable heat sink mechanical mounting and excellent thermal dissipation dissipation.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Infineon Technologies (International Rectifier) |
| Part Number (MPN) | IPW60R024CFD7 |
| Product Category | High-Performance N-Channel Power MOSFET Discrete Series |
| Drain-Source Voltage (Vdss) | 600 V Maximum Continuous Blocking Limit Bound |
| On-Resistance RDS(on) | 20 mΩ Typical / 24 mΩ Maximum (at VGS = 10V Drive Specs) |
| Continuous Drain Current | Continuous DC Rating adapted to package limits based on thermal conditions |
| MOSFET Silicon Technology | Advanced CoolMOS™ CFD7 Fast Diode Superjunction Matrix |
| Total Gate Charge (Qg) | Optimized Low Charge Matrix for High-Frequency Operational Driving |
| Package / Case Form | TO-247 / TO-247-3 Package (3-Pin Lead-Free Through-Hole Tube Pack) |
| Temperature Window | Extended Performance Operating Range Bounds (-55°C to +150°C) |
Versatile High-Voltage Applications
- Server Power Infrastructure: Core switching stages inside high-power density server SMPS grids and modern telecom rectification modules.
- EV Charging Stations: High-efficiency DC-DC conversion steps within automotive fast-charging hardware layouts.
- Solar Inverter Arrays: Low-loss power routing stages performing synchronous rectification inside renewable energy storage networks.
- Industrial PC Power Units: Provides deterministic power-switching corridors inside rugged high-load switching power supply frameworks.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-VOLTAGE DISCRETE SUPERJUNCTION SWITCHING // DIRECT SOURCE ARCHITECTURE