描述
IRFB7430PBF Power MOSFET
40V Breakdown Voltage meets 1.2mΩ Ultra-Low RDS(on) – The Professional HEXFET® Power Silicon Choice for High-Current Synchronous Rectification.
// High-Current 400A Silicon Limited Three-Pin TO-220 Portfolio
The High-Current Power Density Advantage
The IRFB7430PBF represents a premier flagship single-chip switching solution for space-constrained, high-load industrial applications demanding absolute thermal management efficiency and minimal on-state conduction drops. Engineered by International Rectifier (Infineon Technologies) inside their advanced HEXFET® silicon framework, this N-channel power MOSFET mitigates dynamic parasitic power losses flawlessly under rapid commutation states. Housed in a standard through-hole TO-220 package footprint, it secures pure, deterministic power corridors and eliminates high-current heat hazards.
- 40V Heavy-duty drain-source breakdown threshold handling process power spikes safely
- Ultra-low 1.2mΩ maximum on-state resistance matrix minimizing localized dissipation
- High continuous collector current rating handling heavy inductive motor startups cleanly
Key Performance Advantages
1.2mΩ Ultra-Low RDS(on)
Maintains an exceptionally low resistance profile when fully enhanced, sharply dropping system power losses and internal core thermal buildup.
Optimized Gate Charge
Features low total gate charge metrics, enabling fast switching transitions and drastically reducing driving circuit energy requirements smoothly.
Rugged TO-220 Form
Housed in a standard through-hole package configuration, providing highly reliable heat sink mechanical mounting and excellent thermal dissipation dissipation.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Infineon Technologies / International Rectifier |
| Part Number (MPN) | IRFB7430PBF |
| Product Category | High-Performance N-Channel Power MOSFET Discrete Series |
| Drain-Source Voltage (Vdss) | 40 V Maximum Continuous Blocking Limit Bound |
| On-Resistance RDS(on) | 1.0 mΩ Typical / 1.2 mΩ Maximum (at VGS = 10V Drive Specs) |
| Continuous Drain Current | 400 A (Silicon Limited) // 195 A (Package Limited at TC = 25°C) |
| Total Gate Charge (Qg) | Typical 310 nC High-Efficiency Gating Matrix |
| Power Dissipation (Max) | 375 W Maximum Thermal Boundary Rating (at TC = 25°C) |
| Package / Case Form | TO-220 / TO-220AB Package (3-Pin Lead-Free Through-Hole Tube Pack) |
| Temperature Window | Extended Performance Operating Range Bounds (-55°C to +175°C) |
Versatile High-Current Applications
- High-Efficiency SMPS: Core synchronous rectification stages inside server data centers and enterprise telecom brick modules.
- DC Motor Controls: High-performance switching bridges for battery-powered power tools, light electric vehicles, and heavy BLDC motor drives.
- Battery Protection Layouts: Provides deterministic high-current isolation corridors inside industrial multi-cell e-mobility battery packs.
- Solar Inverter Subsystems: Low-loss power routing stage executing continuous power tracking inside green energy DC-DC converters.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-CURRENT DISCRETE POWER SWITCHING // DIRECT SOURCE ARCHITECTURE