描述
K4A8G165WB-BCRC DDR4 SDRAM
2400Mbps High Bandwidth meets 1.2V Low Voltage – The Professional 8Gb DDR4 Memory Choice for Enterprise Servers, Networking Systems, and High-End Computing.
// High-Density DDR4 Core Component 512Mx16 Configuration 96-FBGA Portfolio
The High-Density Advanced Memory Advantage
The K4A8G165WB-BCRC represents a premier professional 8Gb DDR4 SDRAM volatile memory solution engineered for data-heavy, high-speed computing hardware architectures demanding absolute signal processing efficiency and wide interface bandwidth profiles. Built on Samsung’s advanced B-die silicon memory framework, this module processes high-frequency data transmission up to 2400Mbps data rates flawlessly without code execution latency hazards or performance bottlenecks. Housed in an industry-standard 96-FBGA package footprint, it secures pure, deterministic high-speed data tracking execution loops and completely cuts off systemic power bus transmission barriers.
- Massive 8 Gigabits (8Gb) density organized in an efficient 512M x 16 structural memory array configuration
- Advanced DDR4 standard operating at a low 1.2V power rail, reducing overall board power consumption safely
- High-speed DDR4-2400 specification (CL17 parameter nodes) optimizing read/write access cycles cleanly
Key Performance Advantages
2400Mbps Data Rates
Delivers exceptional system throughput and ultra-low access latency, handling high-volume database streams and real-time computation cleanly.
1.2V Eco-Friendly Power
Saves up to 20% electrical energy compared to older DDR3 architectures, minimizing thermal footprints and optimizing systemic reliability safely.
96-FBGA Advanced SMT
Housed inside a fine-pitch ball grid array layout, achieving robust electrical performance and superb mechanical shock resistance smoothly.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Samsung Semiconductor (Original Factory Sealed Line) |
| Part Number (MPN) | K4A8G165WB-BCRC (DDR4 B-die Die Revision) |
| Memory Technology | DDR4 SDRAM (Double Data Rate 4 Synchronous DRAM Architecture) |
| Density Capacity | 8 Gigabits (8Gb Continuous Silicon Matrix Density) |
| Organization Format | 512 Meg Words x 16 Bits Configuration Model |
| Speed Frequency | DDR4-2400 (PC4-19200 Standard Speed Node Performance) |
| Latency CAS Profile | CL17 Nominal Dynamic Cycle Latency Parameters |
| Voltage Supply Nominal | 1.2 VDC Fixed Lowered Main Memory VDD Power Rail Calibration |
| Package / Case Form | 96-FBGA package (96-Ball Fine-Pitch Ball Grid Array Package Structure) |
| Operating Temperature | 0°C to +85°C Commercial Standard Component Range |
Versatile High-Bandwidth Applications
- Enterprise Servers: Core high-speed memory chip driving data center arrays, cloud computation storage, and heavy virtualization tracks safely.
- Networking Gear: Delivers deterministic buffer queuing and packet routing control matrices inside premium switches and 5G gateways smoothly.
- Embedded Computing: Handles demanding automation data caching, advanced industrial controllers, and medical diagnostic hardware cleanly.
- Digital Video Arrays: Optimizes continuous caching performance inside commercial security recorders and high-definition matrix displays.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-PERFORMANCE DDR4 SDRAM MEMORY SOLUTIONS // DIRECT SOURCE ARCHITECTURE