描述
K4B2G1646F-BCK0 DDR3 SDRAM
1600Mbps Reliable Bandwidth meets 1.5V Standard Rail – The Professional 2Gb DDR3 Memory Choice for Embedded Systems, Industrial Computing, and Consumer Hardware Routing.
// High-Density DDR3 Core Component 128Mx16 Configuration 96-FBGA Portfolio
The Mature High-Reliability Memory Advantage
The K4B2G1646F-BCK0 represents a premier professional 2Gb DDR3 SDRAM volatile memory solution engineered for budget-conscious, high-stability computing hardware architectures demanding absolute signal processing efficiency and proven interface bandwidth profiles. Built on Samsung’s robust and mature silicon memory framework, this module processes high-frequency data transmission up to 1600Mbps data rates flawlessly without code execution latency hazards or system downtime risks. Housed in an industry-standard 96-FBGA package footprint, it secures pure, deterministic high-speed data tracking execution loops and completely cuts off systemic power bus transmission barriers.
- 2 Gigabits (2Gb) optimal density organized in an efficient 128M x 16 structural memory array configuration
- Standard DDR3 1.5V power rail interface ensuring wide compatibility with legacy controller nodes safely
- High-speed DDR3-1600 specification (CL11 parameter nodes) optimizing read/write access cycles cleanly
Key Performance Advantages
1600Mbps Stable Speed
Delivers reliable system throughput and low access latency, handling embedded networking streams and automated computing cycles cleanly.
Standard 1.5V Control
Provides reliable signal margins using standard DDR3 1.5V signaling protocols, maximizing architecture compatibility profiles safely.
96-FBGA Advanced SMT
Housed inside a fine-pitch ball grid array layout, achieving robust electrical performance and superb mechanical shock resistance smoothly.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Samsung Semiconductor (Original Factory Sealed Line) |
| Part Number (MPN) | K4B2G1646F-BCK0 (DDR3 F-die Revision Node) |
| Memory Technology | DDR3 SDRAM (Double Data Rate 3 Synchronous DRAM Architecture) |
| Density Capacity | 2 Gigabits (2Gb Continuous Silicon Matrix Density) |
| Organization Format | 128 Meg Words x 16 Bits Configuration Model |
| Speed Frequency | DDR3-1600 (PC3-12800 Standard Speed Node Performance) |
| Latency CAS Profile | CL11 Nominal Dynamic Cycle Latency Parameters |
| Voltage Supply Nominal | 1.5 VDC Fixed Main Memory VDD Power Rail Calibration |
| Package / Case Form | 96-FBGA package (96-Ball Fine-Pitch Ball Grid Array Package Structure) |
| Operating Temperature | 0°C to +85°C Commercial Standard Component Range |
Versatile High-Reliability Applications
- Commercial Networking: Core high-speed buffer memory driving industrial routers, network switch matrices, and optical gateways safely.
- Embedded Computing: Delivers deterministic buffer queuing and program code execution paths inside smart instrumentation blocks smoothly.
- Consumer Automation: Handles demanding local data caching inside smart TVs, setups, and home security recorders cleanly.
- Industrial Control Units: Optimizes long-term operational stability inside factory logic hardware requiring mechanical placement safety.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-PERFORMANCE DDR3 SDRAM MEMORY SOLUTIONS // DIRECT SOURCE ARCHITECTURE