K4D263238G-GC33

Premium Samsung K4D263238G-GC33 is a high-speed 128Mbit GDDR SDRAM memory IC housed in a FBGA144 package. Operating at a fast 300MHz clock frequency with a 3.3V/2.5V power rail, this 4M x 32 organization memory architecture delivers exceptional high-bandwidth data rendering required for legacy graphics cards, medical imaging, and industrial gaming motherboards.

Info Product

SKU: K4D263238G-GC33

Description

K4D263238G-GC33 GDDR SDRAM Memory

High-Bandwidth Architecture meets Double Data Rate Speed – The Professional 128Mb Graphic RAM Choice for Visual Processing & High-Speed Buffer Engines.

// Samsung Semiconductor Original Sealed Allocation
// High-Density 4M x 32 Graphic Memory Infrastructure

The High-Speed Data Streaming Advantage

The K4D263238G-GC33 is a high-performance 128Mbit Graphic Double Data Rate (GDDR) synchronous DRAM device engineered by Samsung. Configured in a robust 4M x 32 architecture matrix, it operates on double data rate operations at both edges of the clock signal, radically boosting bus bandwidth parameters. Housed in a compact, high-thermal-efficiency FBGA144 form factor, it provides the low-latency frame buffer streams required by medical imaging screens, industrial arcade systems, and legacy GPU extensions.

  • Synchronous 4M x 32-bit high-density parallel data organization
  • Rapid 300 MHz clock timing constraints matching legacy graphic lines
  • Advanced FBGA 144-ball package grid enhancing heat dissipation behavior

K4D263238G-GC33

Key Performance Advantages

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Double Bandwidth Pipeline

Implements double data rate interface protocols to capture signals on both rising and falling clock vectors, doubling memory throughput without power penalties.

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Optimized 300MHz Clock

Calibrated precisely for a -33 speed grade rating, maintaining strict data-strobing synchronization loop locks across dense hardware display rendering maps.

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Premium FBGA Footprint

The 144-ball matrix minimizes parasitical stray inductance while boosting high-frequency loop performance, reducing localized thermal degradation over extensive cycles.

Technical Specifications

Parameter Node Detailed Engineering Specification
Manufacturer Samsung Semiconductor
Part Number (MPN) K4D263238G-GC33
Memory Category GDDR SDRAM (Graphics Double Data Rate)
Density / Capacity 128 Mbit (128 Mb Internal Storage Matrix)
Memory Configuration 4M x 32 (4 Meg x 32 Bits Organization Layout)
Clock Frequency 300 MHz Core Frequency Constraints
Speed Grade Designation -33 Rating (3.3 ns cycle access metrics)
Package / Case Form FBGA-144 / BGA144 (Fine-Pitch Ball Grid Array)
Operating Rail Voltage 3.3V Core / 2.5V I/O Interface Supply System
Interface Style SSTL_2 (Stub Series Terminated Logic for 2.5V)

Versatile Hardware Applications

  • Legacy Graphics Cards: Frame buffer rendering memory for desktop computing and custom video processors.
  • Medical Imaging Systems: High-bandwidth caching inside specialized ultrasound and digital X-ray display modules.
  • Industrial Instrumentation: Serves as a reliable cache block for complex avionics displays and automated radar monitors.
  • Legacy Maintenance Channels: Acts as a direct drop-in replacement path for classic Samsung memory mainboards.

Industrial Quality Protections

100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.

Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.

Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.

HIGH-PERFORMANCE MEMORY SOLUTIONS // DIRECT SOURCE ARCHITECTURE

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