K4D263238G-GC33

K4D263238G-GC33

Premium Samsung K4D263238G-GC33 is a high-speed 128Mbit GDDR SDRAM memory IC housed in a FBGA144 package. Operating at a fast 300MHz clock frequency with a 3.3V/2.5V power rail, this 4M x 32 organization memory architecture delivers exceptional high-bandwidth data rendering required for legacy graphics cards, medical imaging, and industrial gaming motherboards.

Info Product

SKU: K4D263238G-GC33

描述

K4D263238G-GC33 GDDR SDRAM Memory

High-Bandwidth Architecture meets Double Data Rate Speed – The Professional 128Mb Graphic RAM Choice for Visual Processing & High-Speed Buffer Engines.

// Samsung Semiconductor Original Sealed Allocation
// High-Density 4M x 32 Graphic Memory Infrastructure

The High-Speed Data Streaming Advantage

The K4D263238G-GC33 is a high-performance 128Mbit Graphic Double Data Rate (GDDR) synchronous DRAM device engineered by Samsung. Configured in a robust 4M x 32 architecture matrix, it operates on double data rate operations at both edges of the clock signal, radically boosting bus bandwidth parameters. Housed in a compact, high-thermal-efficiency FBGA144 form factor, it provides the low-latency frame buffer streams required by medical imaging screens, industrial arcade systems, and legacy GPU extensions.

  • Synchronous 4M x 32-bit high-density parallel data organization
  • Rapid 300 MHz clock timing constraints matching legacy graphic lines
  • Advanced FBGA 144-ball package grid enhancing heat dissipation behavior

K4D263238G-GC33

Key Performance Advantages

💾

Double Bandwidth Pipeline

Implements double data rate interface protocols to capture signals on both rising and falling clock vectors, doubling memory throughput without power penalties.

Optimized 300MHz Clock

Calibrated precisely for a -33 speed grade rating, maintaining strict data-strobing synchronization loop locks across dense hardware display rendering maps.

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Premium FBGA Footprint

The 144-ball matrix minimizes parasitical stray inductance while boosting high-frequency loop performance, reducing localized thermal degradation over extensive cycles.

Technical Specifications

Parameter Node Detailed Engineering Specification
Manufacturer Samsung Semiconductor
Part Number (MPN) K4D263238G-GC33
Memory Category GDDR SDRAM (Graphics Double Data Rate)
Density / Capacity 128 Mbit (128 Mb Internal Storage Matrix)
Memory Configuration 4M x 32 (4 Meg x 32 Bits Organization Layout)
Clock Frequency 300 MHz Core Frequency Constraints
Speed Grade Designation -33 Rating (3.3 ns cycle access metrics)
Package / Case Form FBGA-144 / BGA144 (Fine-Pitch Ball Grid Array)
Operating Rail Voltage 3.3V Core / 2.5V I/O Interface Supply System
Interface Style SSTL_2 (Stub Series Terminated Logic for 2.5V)

Versatile Hardware Applications

  • Legacy Graphics Cards: Frame buffer rendering memory for desktop computing and custom video processors.
  • Medical Imaging Systems: High-bandwidth caching inside specialized ultrasound and digital X-ray display modules.
  • Industrial Instrumentation: Serves as a reliable cache block for complex avionics displays and automated radar monitors.
  • Legacy Maintenance Channels: Acts as a direct drop-in replacement path for classic Samsung memory mainboards.

Industrial Quality Protections

100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.

Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.

Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.

HIGH-PERFORMANCE MEMORY SOLUTIONS // DIRECT SOURCE ARCHITECTURE

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