描述
KLUEG8UHDB-C2D1 UFS 2.1
256GB Massive Capacity meets UFS 2.1 Dual-Lane Gear 3 – The Professional High-Speed Universal Flash Storage Choice for Premium Edge computing, Automotive In-Vehicle Infotainment, and AIoT Gateways.
// High-Density Non-Volatile Flash Cluster Dual-Lane Interface 153-FBGA Portfolio
The High-Bandwidth Next-Gen Storage Advantage
The KLUEG8UHDB-C2D1 represents a premier professional embedded non-volatile solid-state storage solution engineered for space-constrained, high-throughput compute platforms demanding absolute read/write efficiency and multi-lane data routing interface profiles. Built on Samsung’s advanced multi-die V-NAND Flash framework and utilizing the advanced Universal Flash Storage (UFS) 2.1 standard with SCSI Architecture Command Queuing, this system processes parallelized data transmission loops flawlessly without I/O interface latency hazards or software execution bottlenecks. Housed in an industry-standard 153-FBGA package layout, it secures pure, deterministic code tracking loops and completely cuts off hardware memory degradation traps.
- Massive 256 Gigabytes (256GB) continuous silicon density accommodating complex system kernels and asset arrays
- UFS 2.1 Dual-Lane infrastructure optimizing sequential read speeds beyond legacy eMMC limitations safely
- Integrated intelligent controller handling automated wear leveling, bad block maps, and ECC bit correction efficiently
Key Performance Advantages
Dual-Lane High Speed
Unlocks parallelized data read channels running on full duplex M-PHY interfaces, boosting read speeds drastically compared to standard single-wire links cleanly.
256GB Massive Storage
Supplies vast, non-volatile memory block density, providing generous space for rich graphical maps, media analytics, and data caching safely.
153-FBGA Matrix Package
Housed inside a standard high-density fine-pitch ball grid array package, ensuring optimal space allocation with superb solder integrity smoothly.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Samsung Semiconductor (Original Factory Sealed Line) |
| Part Number (MPN) | KLUEG8UHDB-C2D1 |
| Memory Technology | UFS 2.1 (Universal Flash Storage Solid State Framework) |
| Storage Capacity | 256 Gigabytes (256GB Non-Volatile V-NAND Cluster) |
| Bus Interface Mode | Dual-Lane High-Speed Interface (Full Duplex M-PHY Protocol Alignment) |
| Command Architecture | SCSI Architecture Command Queuing (Extending multitasking throughput loops) |
| Integrated Controller | Samsung In-house Flash Logic (Advanced Wear-leveling, Auto ECC, and Bad-block tracking) |
| Package / Case Form | 153-FBGA package (153-Ball Fine-Pitch Ball Grid Array Matrix Layout) |
| Operating Voltages | Core VCC / Interface VCCQ Nominal Dual Power Supply Framework |
| Component Status | Production Quality Grade Active Commercial Hardware Allocation |
Versatile High-Speed Embedded Applications
- Automotive IVI Systems: Primary high-capacity storage block driving smart digital cockpits, real-time navigation mapping, and multimedia dashboard links safely.
- Industrial AIoT Gateways: Delivers deterministic internal OS storage and continuous database caching inside complex industrial edge hubs smoothly.
- Advanced Smart Displays: Handles demanding 4K video buffering, local application assets, and high-definition commercial matrix rendering cleanly.
- Embedded Computing Modules: Optimizes long-term data retention and rapid boot execution paths inside portable medical diagnostic gear.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-PERFORMANCE UFS 2.1 STORAGE SOLUTIONS // DIRECT SOURCE ARCHITECTURE