描述
MT41K256M16TW-107:P DDR3L Memory
4Gb Storage Density meets 1866 Mbps Data Rate – The Professional Low-Voltage DDR3L SDRAM Choice for High-Density Embedded Computing.
// High-Efficiency 256M x 16 Configuration Low Voltage 96-Ball FBGA Portfolio
The High-Bandwidth Low-Voltage Memory Advantage
The MT41K256M16TW-107:P represents a premier flagship single-chip volatile storage solution for high-density, space-constrained data processing units demanding absolute bus utilization efficiency and lower thermal energy dissipation. Engineered by Micron Technology inside their advanced DDR3L (1.35V) SDRAM silicon architecture, this 4-Gigabit memory module processes dynamic burst access cycles flawlessly backward compatible with 1.5V systems. Housed in a standard 96-ball FBGA package footprint, it secures pure, deterministic cache telemetry loops and completely cuts off systemic data latency hazards.
- 4 Megabit dense memory array organized as 256 Megawords by 16 bits architecture
- 1866 Mbps high-throughput data rate reducing processing cycle bottlenecks safely
- Low 1.35V core power voltage requirement optimizing energy efficiency performance profiles
Key Performance Advantages
1866 Mbps Data Transfer
Delivers high-speed clock speed timing capabilities, providing faster application booting speeds and smooth processing loops inside parallel bus configurations.
1.35V Low Voltage Core
Reduces overall active power management overhead by up to 15% compared to legacy 1.5V DDR3 models, eliminating localized internal cabinet heat traps.
96-Ball FBGA Footprint
Housed in a compact and thermally enhanced Fine-Pitch Ball Grid Array layout profile, optimizing trace impedance matching on modern multi-layer computer boards.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Part Number (MPN) | MT41K256M16TW-107:P |
| Memory Type | DDR3L SDRAM (Low-Voltage Synchronous Dynamic RAM) |
| Storage Density | 4 Megabit (4Gb Array Configured inside an 256M x 16 Organization Matrix) |
| Data Rate Speed | 1866 Mbps (Clock Speed Cycle Timing equivalent to DDR3-1866) |
| Core Supply Voltage | 1.35 VDC Standard Nominal Power Rail Specification (Backward Compatible to 1.5V) |
| Die Revision | Micron P-Die Generation Silicon Architecture Modulator |
| Component Status | Production Quality Grade Active Stock Profile |
| Package / Case Form | FBGA-96 Package (Lead-Free SMD Outline Layout, Code: TW) |
| Temperature Window | Standard Commercial Performance Operating Range (0°C to +95°C) |
Versatile Data Storage Applications
- Embedded Computing: Foundational memory block for single-board computers (SBC), commercial PLCs, and rugged industrial controllers.
- Networking Systems: Handles intense packet buffering tasks seamlessly within telecommunication hardware routers and switches.
- Automotive Infotainment: Provides deterministic memory pipelines required for dashboard clusters and smart console processors safely.
- Smart Video Equipment: Unlocks smooth parallel data processing paths required for high-definition hardware surveillance platforms.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-PERFORMANCE DDR3L STORAGE SOLUTIONS // DIRECT SOURCE ARCHITECTURE