描述
MT53E512M32D2NP-046 LPDDR4X
16Gb High Density meets 2133MHz Clock Rate – The Professional Low-Power Mobile SDRAM Choice for Edge AI and Embedded Systems.
// High-Efficiency Dual-Channel 512M x 32 Ultra-Low 0.6V VDDQ 200-Ball FBGA Portfolio
The High-Bandwidth Low-Power Memory Advantage
The MT53E512M32D2NP-046 represents a premier flagship single-chip volatile storage solution for high-density, space-constrained mobile and automotive computing units demanding absolute bus utilization efficiency and minimal battery drain profiles. Engineered by Micron Technology inside their advanced LPDDR4X SDRAM silicon architecture, this 16-Gigabit memory module processes dynamic burst access cycles flawlessly under tight power constraints. Housed in a standard 200-ball FBGA package footprint, it secures pure, deterministic cache telemetry loops and completely cuts off systemic data processing latency hazards.
- 16 Megabit dense mobile memory array organized inside a 512M x 32 dual-channel framework
- 2133MHz standard clock timing delivering high-throughput data processing bandwidth safely
- Reduced 0.6V VDDQ I/O voltage level optimizing power efficiency over legacy LPDDR4 standards
Key Performance Advantages
LPDDR4X Low Voltage
Drops the I/O supply line requirements down to 0.6V, achieving significant energy saving performance and extending standby lifespans in mobile edge devices.
2133MHz High Speed
Supports high-speed operation channels matching massive clock parameters, ideal for managing continuous image streams and real-time computing loops.
200-Ball FBGA Form
Housed in a compact, space-saving Fine-Pitch Ball Grid Array configuration, maximizing hardware integration layout density on multi-layer mobile mainboards.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Part Number (MPN) | MT53E512M32D2NP-046 |
| Memory Category | Low-Power LPDDR4X SDRAM High-Performance Storage Discrete Series |
| Storage Density | 16 Gigabit (16Gb Density Matrix structured as 2 Gigabytes) |
| Organization Format | 512M x 32 (Flexible Integrated Dual-Channel Architecture) |
| Max Clock Frequency | 2133 MHz Standard Continuous Core Cycle Speed |
| I/O Supply Voltage (VDDQ) | 0.6 VDC Low-Voltage Energy Saving Operational Rail Specification |
| Component Status | Production Quality Grade Active Commercial Inventory Profile |
| Package / Case Form | FBGA-200 Package (200-Ball Lead-Free Fine-Pitch Grid SMT Layout) |
| Temperature Window | Standard Performance Extended Operating Range Bounds |
Versatile Mobile & Embedded Applications
- Smartphones & Tablets: Premium volatile cache memory optimizing heavy operating systems and multitasking application loops.
- Automotive Infotainment: High-bandwidth data routing corridors driving multi-screen vehicle displays and instrumentation layers safely.
- Edge AI Computing: Provides highly responsive local storage matrices needed for running real-time artificial intelligence algorithms.
- Industrial Embedded IoT: Secures consistent non-volatile data exchange capabilities inside high-end portable imaging hardware equipment.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-PERFORMANCE LPDDR4X MOBILE STORAGE SOLUTIONS // DIRECT SOURCE ARCHITECTURE