描述
SCT30N120 SiC Power MOSFET
1200V High-Voltage Matrix meets Ultra-Low Rdson – The Professional Silicon Carbide (SiC) Power Choice for Solar Inverters, EV Charging Stations, and High-Efficiency Converters.
// 1200V Breakdown Voltage 45A Continuous Drain Current TO-247 Packaging Portfolio
The High-Efficiency Next-Gen SiC Power Advantage
The SCT30N120 represents a premier professional Silicon Carbide (SiC) power MOSFET solution engineered for high-throughput, high-density hardware architectures demanding absolute thermal stability and minimized switching losses. Utilizing ST’s advanced proprietary SiC technology framework, this module processes high-voltage switching profiles up to 1200V flawlessly without trailing current hazards or systemic performance lagging. Housed in an industry-standard TO-247 package layout with an extended 200°C operating thermal ceiling, it secures pure, deterministic power conversion loops and completely cuts off energy dissipation bottlenecks.
- Ultra-low on-resistance (90 mΩ typical Rdson) maximizing operational efficiency cleanly
- Outstanding thermal capacity supporting up to 200°C maximum junction temperature safely
- Extremely reduced gate charge and parasitic capacitances allowing ultra-fast switching frequencies smoothly
Key Performance Advantages
1200V / 45A Rating
Delivers robust high-voltage operation and high current density capabilities, driving critical industrial power applications cleanly.
200°C Max TJ Ceiling
Provides industry-leading thermal resilience, scaling system downsize pathways by reducing heavy heat sink dependency safely.
TO-247 Package Power
Housed inside a standard high-power layout package frame, securing optimal substrate insulation and robust mechanical connection smoothly.
Technical Specifications
| Parameter Node | Detailed Engineering Specification |
|---|---|
| Manufacturer | STMicroelectronics (Premium Industrial Sourcing) |
| Part Number (MPN) | SCT30N120 (ST SiC MOSFET Portfolio) |
| Technology Structure | Silicon Carbide (SiC) Advanced Power Transistor Matrix |
| Drain-Source Voltage (Vdss) | 1200 VDC Maximum Static Standby Blocking Rating |
| Continuous Drain Current (Id) | 45 A (at Tc = 25°C Nominal Shell Temperature Calibration) |
| On-State Resistance (Rdson) | 90 mΩ (Typical) / 115 mΩ (Maximum at Vgs = 20V) |
| Gate Charge Metrics (Qg) | Ultra-low total gate input charge minimizing active driver loss cleanly |
| Intrinsic Diode Block | Integrated fast body diode with near-zero reverse recovery charge (Qrr) |
| Package / Case Form | TO-247 package (Through-Hole 3-Lead High-Power Substrate Layout Frame) |
| Component Status | Production Quality Grade Active Commercial Hardware Allocation Portfolio |
Versatile High-Voltage Power Applications
- Solar Grid Inverters: Core power switch infrastructure elevating efficiency levels across solar converter strings safely.
- EV DC Charging Systems: Delivers deterministic low-conduction loss paths needed for rapid automotive electric charging infrastructure smoothly.
- High-Frequency SMPS Modules: Handles demanding automation power supplies and telecom server rectifiers cleanly.
- Industrial Induction & UPS: Optimizes computational thermal boundaries inside heavy uninterruptible motor drive subsystems.
Industrial Quality Protections
100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.
Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.
Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.
HIGH-PERFORMANCE SiC POWER SOLUTIONS // DIRECT SOURCE ARCHITECTURE