FF450R12ME4

Premium Infineon FF450R12ME4 is a heavy-duty 1200V 450A dual IGBT module housed in an EconoDUAL™ 3 infrastructure. Utilizing advanced Fourth-Generation Trenchstop™ technology, integrated NTC thermistors, and low-inductance busbar layouts, this rugged platform delivers deterministic power-switching corridors required for high-capacity industrial inverter networks.

Info Product

SKU: FF450R12ME4 Brand:

Description

FF450R12ME4 Dual IGBT Module

1200V Blocking Voltage meets 450A Current Collector – The Professional EconoDUAL™ 3 Module Choice for High-Power Inverters.

// Infineon Technologies Premium Original Factory Sealed Allocation
// High-Efficiency Trenchstop™ IGBT4 Matrix Integrated NTC Portfolio

The High-Power Density Switching Advantage

The FF450R12ME4 represents a premier flagship modular solution for large-scale, high-voltage switching grids demanding absolute thermal control and massive collector current stability. Engineered by Infineon utilizing their patented Trenchstop™ IGBT4 matrix core, this dual-channel half-bridge module cuts down static conduction loss matrices flawlessly. Housed in an industry-standard EconoDUAL™ 3 baseline footprint layout, it secures pure, deterministic power telemetry loops and eliminates high-current electrical saturation hazards.

  • 1200V Rugged blocking threshold handling voltage fluctuations inside heavy grids safely
  • Integrated NTC thermistor sensor executing continuous localized temperature reporting
  • Optimized low-inductance baseplate design layout dropping systemic switching noise limits

FF450R12ME4

Key Performance Advantages

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450A Dynamic Collector

Delivers continuous 450 Amp power conduction performance, keeping thermal dissipation envelopes highly optimized under constant industrial load stresses.

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Trenchstop™ IGBT4 Core

Features an advanced trench-gate structure that establishes an incredibly low VCE(sat) saturation rating, boosting overall system energy conversion efficiency indicators.

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EconoDUAL™ 3 Form

Housed in a globally standard mechanical outline frame with robust press-fit terminal pin routing configurations, ensuring dependable structural busbar scaling.

Technical Specifications

Parameter Node Detailed Engineering Specification
Manufacturer Infineon Technologies (International Rectifier)
Part Number (MPN) FF450R12ME4
Product Category High-Power Dual Transistor Half-Bridge IGBT Modules
Max Blocking Voltage 1200 V Maximum Collector-Emitter Voltage Breakdown Bound
Continuous DC Collector 450 A Sourcing Current Rating (at TC = 100°C Terminal Condition)
IGBT Silicon Technology Advanced Trenchstop™ IGBT4 with Emcon 4 Diode Matrix Array
Saturation Voltage Typical 1.75V VCE(sat) Conduction Barrier Limit
Thermal Protection Integrated Internal NTC Temperature Resistor Component
Package / Case Form EconoDUAL™ 3 Base (Standard Copper Baseplate Surface Mount Housing)
Max Junction Temp Extended Operation Performance Window Up to +150°C [175°C Max Switching]

Versatile High-Power Applications

  • Industrial AC Inverters: Heavy-duty motor speed drive modules, multi-axis manufacturing controls, and high-power servo platforms.
  • Renewable Energy Converters: High-efficiency sub-station multi-phase solar string inverters and active wind turbine power matrices.
  • Uninterruptible Power (UPS): Massive backup grid systems protecting industrial server clusters against sudden grid dropout arcs.
  • Commercial Electric Vehicles: High-voltage powertrain auxiliary drives and primary motor speed control switching bridges.

Industrial Quality Protections

100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.

Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.

Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.

HIGH-POWER DENSITY SWITCHING INTEGRATION // DIRECT SOURCE FACTORY

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