FF450R12ME4

FF450R12ME4

Premium Infineon FF450R12ME4 is a heavy-duty 1200V 450A dual IGBT module housed in an EconoDUAL™ 3 infrastructure. Utilizing advanced Fourth-Generation Trenchstop™ technology, integrated NTC thermistors, and low-inductance busbar layouts, this rugged platform delivers deterministic power-switching corridors required for high-capacity industrial inverter networks.

Info Product

SKU: FF450R12ME4 品牌:

描述

FF450R12ME4 Dual IGBT Module

1200V Blocking Voltage meets 450A Current Collector – The Professional EconoDUAL™ 3 Module Choice for High-Power Inverters.

// Infineon Technologies Premium Original Factory Sealed Allocation
// High-Efficiency Trenchstop™ IGBT4 Matrix Integrated NTC Portfolio

The High-Power Density Switching Advantage

The FF450R12ME4 represents a premier flagship modular solution for large-scale, high-voltage switching grids demanding absolute thermal control and massive collector current stability. Engineered by Infineon utilizing their patented Trenchstop™ IGBT4 matrix core, this dual-channel half-bridge module cuts down static conduction loss matrices flawlessly. Housed in an industry-standard EconoDUAL™ 3 baseline footprint layout, it secures pure, deterministic power telemetry loops and eliminates high-current electrical saturation hazards.

  • 1200V Rugged blocking threshold handling voltage fluctuations inside heavy grids safely
  • Integrated NTC thermistor sensor executing continuous localized temperature reporting
  • Optimized low-inductance baseplate design layout dropping systemic switching noise limits

FF450R12ME4

Key Performance Advantages

450A Dynamic Collector

Delivers continuous 450 Amp power conduction performance, keeping thermal dissipation envelopes highly optimized under constant industrial load stresses.

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Trenchstop™ IGBT4 Core

Features an advanced trench-gate structure that establishes an incredibly low VCE(sat) saturation rating, boosting overall system energy conversion efficiency indicators.

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EconoDUAL™ 3 Form

Housed in a globally standard mechanical outline frame with robust press-fit terminal pin routing configurations, ensuring dependable structural busbar scaling.

Technical Specifications

Parameter Node Detailed Engineering Specification
Manufacturer Infineon Technologies (International Rectifier)
Part Number (MPN) FF450R12ME4
Product Category High-Power Dual Transistor Half-Bridge IGBT Modules
Max Blocking Voltage 1200 V Maximum Collector-Emitter Voltage Breakdown Bound
Continuous DC Collector 450 A Sourcing Current Rating (at TC = 100°C Terminal Condition)
IGBT Silicon Technology Advanced Trenchstop™ IGBT4 with Emcon 4 Diode Matrix Array
Saturation Voltage Typical 1.75V VCE(sat) Conduction Barrier Limit
Thermal Protection Integrated Internal NTC Temperature Resistor Component
Package / Case Form EconoDUAL™ 3 Base (Standard Copper Baseplate Surface Mount Housing)
Max Junction Temp Extended Operation Performance Window Up to +150°C [175°C Max Switching]

Versatile High-Power Applications

  • Industrial AC Inverters: Heavy-duty motor speed drive modules, multi-axis manufacturing controls, and high-power servo platforms.
  • Renewable Energy Converters: High-efficiency sub-station multi-phase solar string inverters and active wind turbine power matrices.
  • Uninterruptible Power (UPS): Massive backup grid systems protecting industrial server clusters against sudden grid dropout arcs.
  • Commercial Electric Vehicles: High-voltage powertrain auxiliary drives and primary motor speed control switching bridges.

Industrial Quality Protections

100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.

Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.

Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.

HIGH-POWER DENSITY SWITCHING INTEGRATION // DIRECT SOURCE FACTORY

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