STW40N95K5

STW40N95K5

Premium ST STW40N95K5 is a 950V 38A N-channel MOSFET in a TO-247 package. Featuring 130mΩ Rdson, MDmesh K5 architecture, and Zener protection, this framework delivers deterministic power pipelines safely.

Info Product

SKU: STW40N95K5 品牌:

描述

STW40N95K5 Power MOSFET

950V Ultra-High Voltage meets MDmesh K5 Superjunction – The Professional N-Channel Power MOSFET Choice for High-Efficiency Switching Power Supplies and Rugged Industrial Converters.

// STMicroelectronics Premium Original Factory Sealed Allocation
// 950V Breakdown Voltage 38A Continuous Drain Current TO-247 Packaging Portfolio

The Absolute Ultra-High Voltage Rugged Power Advantage

The STW40N95K5 represents a premier professional N-channel power MOSFET solution engineered for space-constrained, high-throughput hardware architectures demanding absolute overvoltage headroom stability and minimized switching conduction losses. Utilizing ST’s advanced proprietary MDmesh K5 superjunction technology framework, this module processes high-voltage switching profiles up to 950V flawlessly without voltage transient hazards or systemic performance lagging. Housed in an industry-standard TO-247 package layout with integrated gate-source Zener protection nodes, it secures pure, deterministic power conversion loops and completely cuts off electrical surge degradation vulnerabilities.

  • Ultra-low on-resistance per area (130 mΩ typical Rdson) maximizing system power conversion conversion cleanly
  • Integrated Zener protection diodes safeguarding gate structures against ESD and overvoltage spikes safely
  • 100% avalanche tested architecture delivering outstanding dV/dt and ruggedness tolerances smoothly

STW40N95K5

Key Performance Advantages

950V Voltage Headroom

Provides an exceptional drain-source breakdown boundary, securing critical safety margins inside high-input flyback configurations cleanly.

🛡️

MDmesh K5 Technology

Combines ultra-low gate charge metrics with a highly optimized superjunction matrix, drastically suppressing dynamic switching loss metrics safely.

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TO-247 Package Power

Housed inside a standard heavy-duty leaded format package, ensuring maximum substrate thermal dissipation and mechanical rigidity smoothly.

Technical Specifications

Parameter Node Detailed Engineering Specification
Manufacturer STMicroelectronics (Premium Sealed Sourcing Line)
Part Number (MPN) STW40N95K5 (MDmesh K5 Superjunction Series)
FET Type Channel N-Channel Enhancement Mode Silicon Power Transistor System
Drain-Source Voltage (Vdss) 950 VDC Maximum Static Blocking Capability Limit
Continuous Drain Current (Id) 38 A (at Tc = 25°C Nominal Case Substrate Temperature)
On-State Resistance (Rdson) 130 mΩ (Typical) / 160 mΩ (Maximum at Vgs = 10V Operating Point)
Gate Charge Metrics (Qg) Optimized ultra-low input charge driving rapid cycle execution cleanly
Gate Protection Design Monolithically co-integrated Zener diodes guaranteeing structural ESD immunity
Package / Case Form TO-247 package (Through-Hole High-Power 3-Lead Frame Configuration)
Component Status Production Quality Grade Active Commercial Hardware Allocation Portfolio

Versatile High-Voltage Power Applications

  • Switch-Mode Power Supplies: Primary power converter switch handling demanding industrial SMPS topologies safely.
  • High-Power LED Drivers: Delivers deterministic low-conduction losses required inside high-lumen illumination units smoothly.
  • Solar Power Inverters: Core high-voltage matrix performing switching controls across renewable energy arrays cleanly.
  • Industrial HID Ballasts: Optimizes computational thermal dissipation boundaries inside heavy-duty stadium lighting controllers.

Industrial Quality Protections

100% Original Sourcing: Procured securely through fully audited tier-1 franchise lines, completely ensuring anti-counterfeit protection.

Anti-Static Handling: Stored and picked in full alignment with international ANSI/ESD cleanroom facility benchmarks.

Full Batch Traceability: Verified via intensive certificate analysis and rigorous documentation tracking prior to export dispatch.

HIGH-PERFORMANCE POWER MOSFET SOLUTIONS // DIRECT SOURCE ARCHITECTURE

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